Theoretical investigation of intrinsic point defects and the oxygen migration behavior in rare earth hafnates

In this work, the composition-dependent point defect types and formation energies of RE₂Hf₂O₇ (RE = La, Ce, Pr, Nd, Pm, Sm, Eu and Gd) as well as the oxygen diffusion behavior are systematically investigated by first-principles calculations. The possible defect reactions and dominant defect complexes under stoichiometric and non-stoichiometric conditions are revealed. It is found that O Frenkel pairs are the predominant defect in stoichiometric pyrochlore hafnates. Hf-RE cation anti-site defects, accompanied by RE vacancies and/or oxygen interstitials, are stable in the non-stoichiometric case of HfO₂ excess. On the other hand, RE-Hf anti-site defects together with oxygen vacancies and/or RE interstitials are preferable in the case of RE₂O₃ excess. The energy barriers for the migration along the V_O48f - V_O48f pathway of pyrochlore hafnates were calculated to be between 0.81 eV and 0.89 eV. Based on these results, a defect engineering strategy is proposed and the pyrochlore hafnates investigated here are predicted to exhibit potential oxygen ionic conductivity.     

吸湿凉爽机织物的结构设计与性能

为研究织物组织结构与复合纱线线密度对织物凉爽性能的影响,将线密度为7.4和9.8 tex涤纶分别与线密度为7.8 tex锦纶反向加捻、并线后作为纬纱,以8.3 tex涤纶/竹浆纤维50/50混纺纱作经纱,设计平纹、二上一下斜纹和透孔组织织物.测试织物的瞬间接触凉感、热湿舒适性能及织物干、湿态升温曲线,并采用凉爽温度指数对织物的综合凉爽性能进行评价.研究结果表明:6种设计织物的瞬间接触凉感均高于标准,且平纹织物最好,纬纱粗细对瞬间接触凉感影响不显著;透孔织物透气性最好,且在人体出汗的状态下具有较好的导湿散热性能.平纹织物凉爽温度指数最高,最大凉爽温度为2.8℃,综合凉爽性能最好.     

三维石墨烯-碳纳米管/水泥净浆的压敏性能

为了探索三维石墨烯-碳纳米管(G-CNTs)/水泥净浆的压敏性能,采用四电极法研究了荷载作用下GCNTs/水泥净浆的电阻率变化,并分析不同G-CNTs掺量、加载幅度、加载速度以及恒定荷载对电阻率变化的影响。研究表明:随着G-CNTs掺量的增加,电阻率呈先减小后稳定的变化趋势,在G-CNTs掺量由0.2wt%增加至1.6wt%时,电阻率下降51.8%;电阻率与温度呈负相关;G-CNTs掺量高于0.8wt%时可以显著提高水泥净浆的压敏性能,且电阻率变化率与应力应变有明显的对应关系,1.2wt%G-CNTs掺量下试件的应力灵敏系数和应变灵敏系数分别为2.3%/MPa和291;G-CNTs/水泥净浆电阻率变化率幅值随着加载幅度增大而相应增加,其电阻率变化率曲线在不同加载速度以及恒定荷载作用下均与应力-应变曲线一一对应,具有良好的压敏特性。     

建筑用气密膜相关强度性能试验研究

气密膜是被动房和超低能耗建筑气密性处理的常用材料,由于试验设备及方法等原因,国内对建筑用气密膜性能的试验研究较少,从施工应用角度出发,针对国内外无纺布基气密膜的相关强度性能开展试验研究,为气密膜的工程应用提供参考.     

Dual effect synergistically triggered Ce:(Y,Tb)3(Al,Mn)5O12 transparent ceramics enabling a high color-rendering index and excellent thermal stability for white LEDs

Ce:Y₃Al₅O₁₂ transparent ceramics (TCs) with appropriate emission light proportion and high thermal stability are significant to construct white light emitting diode devices with excellent chromaticity parameters. In this work, strategies of controlling crystal-field splitting around Ce³⁺ ion and doping orange-red emitting ion, were adopted to fabricate Ce:(Y,Tb)₃(Al,Mn)₅O₁₂ TCs via vacuum sintering technique. Notably, 85.4 % of the room-temperature luminescence intensity of the TC was retained at 150 °C, and the color rendering index was as high as 79.8. Furthermore, a 12 nm red shift and a 16.2 % increase of full width at half maximum were achieved owing to the synergistic effects of Tb³⁺ and Mn²⁺ ions. By combining TCs with a 460 nm blue chip, a warm white light with a low correlated color temperature of 4155 K was acquired. Meanwhile, the action mechanism of Tb³⁺ ion and the energy transfer between Ce³⁺ and Mn²⁺ ions were verified in prepared TCs.     

聚乙烯催化剂用烷氧基镁载体的研究进展

基于烷氧基镁载体的Ziegler-Natta聚乙烯催化剂具有活性高、氢调性能好等优点,是目前聚烯烃工业中的研究热点。介绍了烷氧基镁载体的发展进程,综述了烷氧基镁载体的制备及改进方法,分析了烷氧基镁载体在催化剂制备过程中的作用,并对开发适用于乙烯聚合的烷氧基镁载体提出了展望。     

Toughness and R-curve behaviour of laminated Si3N4/SiCw ceramics

Laminated Si₃N₄/SiC_w ceramics were successfully prepared by tape casting and hot-pressing. Its mechanical properties were measured and the impact resistance was discussed. The toughness of the laminated Si₃N₄/SiC_w ceramics was 13.5 MPa m^1/2, which was almost 1.6 times that of Si₃N₄/SiC_w composite ceramics, namely 8.5 MPa m^1/2. Moreover, the indentation strength of laminated Si₃N₄/SiC_w ceramics was not sensitive to increasing indentation loads and exhibited a rising R-curve behaviour, indicating that the laminated Si₃N₄/SiC_w ceramics had excellent impact resistance. The improved toughness and impact resistance of laminated Si₃N₄/SiC_w ceramics was attributed to the residual stress caused by a thermal expansion coefficient mismatch between the different layers, resulting in crack deflection and bridging of SiC whiskers in the interface layer, thus consuming a large amount of fracture work.